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| IPA057N08N3 G OptiMOS(TM)3 Power-Transistor Features * Ideal for high frequency switching and sync. rec. * Optimized technology for DC/DC converters * Excellent gate charge x R DS(on) product (FOM) * N-channel, normal level * 100% avalanche tested * Pb-free plating; RoHS compliant * Qualified according to JEDEC1) for target applications Type IPA057N08N3 G Product Summary V DS R DS(on),max ID 80 5.7 60 V m A Package Marking PG-TO220-FP 057N08N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C2) T C=100 C Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 www..com 1) 2) Value 60 43 240 290 20 Unit A I D,pulse E AS V GS P tot T j, T stg T C=25 C I D=60 A, R GS=25 mJ V W C T C=25 C 39 -55 ... 175 55/175/56 J-STD20 and JESD22 Current is limited by package; with an RthJC=1 K/W in a standard TO-220 package the chip is able to carry 119A. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev. 2.0 page 1 2008-11-20 IPA057N08N3 G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case R thJC 3.8 K/W Values typ. max. Unit Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=90 A V DS=80 V, V GS=0 V, T j=25 C V DS=80 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=60 A V GS=6 V, I D=30 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=60 A 80 2 2.8 0.1 3.5 1 A V 45 10 1 4.9 6.3 2.2 90 100 100 5.7 9.9 S nA m www..com Rev. 2.0 page 2 2008-11-20 IPA057N08N3 G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 5) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 5) Values typ. max. Unit C iss C oss C rss t d(on) tr t d(off) tf V DD=40 V, V GS=10 V, I D=60 A, R G=1.6 V GS=0 V, V DS=40 V, f =1 MHz - 3570 963 36 17 42 36 9 4750 1280 - pF ns Q gs Q gd Q sw Qg V plateau Q oss V DD=40 V, V GS=0 V V DD=40 V, I D=60 A, V GS=0 to 10 V - 18 10 18 52 5.0 70 69 93 nC V nC IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=60 A, T j=25 C V R=40 V, I F=I S, di F/dt =100 A/s - 1.0 64 121 60 240 1.2 - A V ns nC See figure 16 for gate charge parameter definition www..com Rev. 2.0 page 3 2008-11-20 IPA057N08N3 G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 50 80 40 60 30 P tot [W] I D [A] 20 10 0 0 50 100 150 200 40 20 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 limited by on-state resistance 1 s 10 s 0.5 102 1 ms 100 s 100 0.2 Z thJC [K/W] I D [A] 0.1 0.05 10 ms DC 101 10-1 0.02 0.01 www..com single pulse 100 10 -1 10-2 10 0 10 1 10 2 10-5 10-4 10-3 10-2 10-1 100 101 V DS [V] t p [s] Rev. 2.0 page 4 2008-11-20 IPA057N08N3 G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 240 10 V 8V 7V 6.5 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 20 200 16 6V 4.5 V 5V 5.5 V 6V 160 120 5.5 V R DS(on) [m] 12 I D [A] 8 6.5 V 7V 8V 80 5V 40 4.5 V 4 10 V 0 0 1 2 3 4 5 0 0 40 80 120 160 200 240 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 180 8 Typ. forward transconductance g fs=f(I D); T j=25 C 160 150 120 120 90 g fs [S] 175 C 25 C I D [A] 80 60 www..com 30 40 0 0 2 4 6 8 0 0 40 80 120 160 V GS [V] I D [A] Rev. 2.0 page 5 2008-11-20 IPA057N08N3 G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=60 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 12 4 10 3 8 900 A R DS(on) [m] 90 A 6 typ V GS(th) [V] max 2 4 1 2 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 Ciss 103 Coss 103 102 25 C 175 C, 98% C [pF] I F [A] 175 C 25 C, 98% 102 Crss 101 www..com 101 0 20 40 60 80 100 0 0.5 1 1.5 2 V DS [V] V SD [V] Rev. 2.0 page 6 2008-11-20 IPA057N08N3 G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=60 A pulsed parameter: V DD 12 10 150 C 100 C 25 C 20 V 40 V 60 V 8 10 V GS [V] 0.1 1 10 100 1000 I AV [A] 6 4 2 1 0 0 20 40 60 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 90 V GS 85 Qg 80 V BR(DSS) [V] 75 V g s(th) 70 www..com 65 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 60 T j [C] Rev. 2.0 page 7 2008-11-20 IPA057N08N3 G PG-TO-220-3-31 www..com Rev. 2.0 page 8 2008-11-20 IPA057N08N3 G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types www..com in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 9 2008-11-20 |
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